Search results for " Radiation Effects"

UV-Photoinduced Defects In Ge-Doped Optical Fibers

2005

We investigated the effect of continuous-wave (cw) UV laser radiation on single-mode Ge-doped H2- loaded optical fibers. An innovative technique was developed to measure the optical absorption (OA) induced in the samples by irradiation, and to study its dependence from laser fluence. The combined use of the electron spin resonance (ESR) technique allowed the structural identification of several radiation-induced point defects, among which the Ge(1) (GeO4 -) is found to be responsible of induced OA in the investigated spectral region.

Bleaching of optical activity induced by UV Laser exposure in natural silica

2004

We report experimental data on two types of natural silica, differing for their OH content, irradiated with UV photons (4.66 eV) from a pulsed Nd:YAG laser. Irradiation induces a reduction of the absorption band at 5.12eV and of the associated emissions at 3.14eV and 4.28eV, ascribed to twofold coordinated Ge (=Ge'') centers pre-existing in our samples. The bleaching is mainly due to the post-irradiation conversion of =Ge'' into the paramagnetic H(II) center via trapping of a H atom. Comparison with literature data points out the peculiarities of silica with a low Ge concentration as regards UV induced transformations.

Influence du rayonnement X sur des fibres et préformes canoniques dopées au phosphore

2009

Laser guns and hot plates

2005

Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

2017

International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.

Time resolved photoluminescence associated with non-bridging oxygen hole centers in irradiated silica

2008

Abstract We report time resolved photoluminescence spectra of irradiated silica under excitation with a laser tunable in the visible and UV range. The investigated samples exhibit the emission band at 1.9 eV associated with non-bridging oxygen hole centers, whose spectral and kinetics properties do not depend on the kind of irradiation (γ, β and neutrons). The 1.9 eV luminescence decay follows a multi-exponential curve with a characteristic lifetime that increases from 8.9 μs to 10.4 μs on increasing the emission energy. This dependence accounts for the blue-shift of the emission band during its decay and is interpreted as due to the inhomogeneous properties of silica leading to a distribut…

Radiation responses of Yb/Er-doped phosphosilicate optical fibers: hardening mechanisms related to Ce-codoping

2012

International audience; In this paper, we investigated the origins of the Ce positive influence on the radiation response of Yb/Er-doped phosphosilicate optical fibers. To this purpose, we carried out during γ-irradiations an online characterization on active optical fiber prototypes, made with different Ce concentrations and integrated in optical amplifiers. The hardening effect of Ce-codoping is highlighted, as well as some aspects related to the radiation response of the phosphosilicate host glass of the active optical fibers.

Photoluminescence in gamma-irradiated alpha-quartz investigated by synchrotron radiation

2004

Abstract We report an experimental investigation of the photoluminescence, under excitation by synchrotron radiation within the absorption band at 7.6 eV , induced in γ-irradiated α-quartz. Two emissions centered at 4.9 and 2.7 eV are observed at low temperature: the former decreases above 40 K , whereas the second band exhibits an initial slight increase and its quenching is effective above 100 K . Furthermore, the decay kinetics of both emissions occur in a time scale of nanoseconds: at T=17.5 K we measured a lifetime τ∼1.0 ns for the photoluminescence at 4.9 eV and τ∼3.6 ns for that at 2.7 eV . These results give new insight on the optical properties associated with defects peculiar of c…

Effects of high-energy electrons in advanced NAND flash memories

2016

We study the effects of high-energy electrons on advanced NAND Flash memories with multi-level and single-level cell architecture. We analyze the error rate in floating gate cells as a function of electron energy, evaluate the impact of total ionizing dose, and discuss the physical origin of the observed behavior.

Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes

2016

Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.